On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...
TOKYO — Swiss-based Innovative Silicon Solutions (ISS) and the Swiss Federal Institute of Technology have developed a silicon-on-insulator based single-transistor DRAM cell prototype that will scale ...
One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...
Dynamic random access memory (DRAM) remains a cornerstone of modern electronic systems, enabling rapid data storage and retrieval. Recent developments have focused on capacitorless designs – notably ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, leader mondiale nel settore delle soluzioni di memoria, ha annunciato oggi lo sviluppo di OCTRAM (il transistor a canale a ossido-semiconduttore DRAM), un ...
How SEMulator3D can be used to study micro loading and manufacturing variability in an advanced DRAM process that exhibits a wiggling AA profile. In a DRAM structure, the charging and discharging ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
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