Alliance Memory has expanded its line of legacy low-power CMOS SRAMs with a new 32M IC (2M x 16 / 4M x 8 switchable), the company's highest density low-power device to date. Operating from a single ...

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

Improved bonding technology helped Toshiba and IBM Corp. develop a higher performance CMOS FET. CMOS has traditionally played a central role in semiconductor design, a position now under threat as ...