A stunning new imaging breakthrough lets scientists see — and fix — the atomic flaws hiding inside tomorrow’s computer chips.

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Researchers at Cornell University have developed a powerful imaging technique that reveals atomic scale defects inside computer chips for the first time. Using an advanced electron microscopy method, ...

Semiconductor industry researchers have been anticipating the need for better transistor channel materials to replace silicon for a long time, but silicon devices have continued to improve enough to ...

CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

For nearly two decades, two‑dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising ...

For almost two decades, scientists have been trying to move beyond silicon, the material ...

The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...