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Samsung and SK hynix advance 4F² DRAM as gateway to 3D memory

Samsung Electronics and SK hynix are accelerating the development of next-generation three-dimensional (3D) dynamic random-access memory (DRAM), with both companies aiming to complete and test early ...
Electronic Design

Overcome Traditional Memory-Speed Barriers With Embedded DRAM

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...
Semiconductor Engineering

Baby Steps Toward 3D DRAM

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
Semiconductor Engineering

Will Monolithic 3D DRAM Happen?

As DRAM scaling slows, the industry will need to look for other ways to keep pushing for more and cheaper bits of memory. The most common way of escaping the limits of planar scaling is to add the ...
TechSpot

DRAM manufacturers explore new designs to overcome 3D stacking hurdles

Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
EDN

Toshiba discloses new embedded DRAM cell architecture

Toshiba Corp. Friday said it developed an embedded DRAM cell on silicon-on-insulator (SOI) wafers. Mass production of the system-on-chips (SoCs) that will result from the innovation is expected to ...
EDN

Toshiba cuts capacitor from DRAM cell design

TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...