Diodes Incorporated has introduced a family of high-speed switching diodes in a choice of small footprint, low-profile packages, enabling significant reductions in component count and PCB area.
The SCS220AE is another SiC Schottky Barrier Diode proudly developed by ROHM Semiconductor constructed from a silicon carbide epitaxial plane. This diode has a reverse voltage of 650 V and forward ...
Diodes Incorporated has introduced a family of high-speed switching diodes in a choice of small footprint, low-profile packages, enabling significant reductions in component count and PCB area. Diodes ...
SEATTLE--(BUSINESS WIRE)-- Diodes Incorporated (Nasdaq: DIOD) today announced, at USB Developer Days, the PI3DBS16222 crossbar switch for high-speed differential and serial signals. Optimized for the ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (Nasdaq: DIOD) today announced the PI3WVR648GEAEX five-lane MIPI 2:1 switch, capable of switching physical layers that comply with either C-PHY or D ...
High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...
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