Today’s trend in semiconductor chip manufacturing involves the miniaturizationof transistors and increasing the density of transistors per integrated circuit. Researchers at CU Boulder have developed ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

NEC Corporation and NEC Electronics Corporation announced the development of a transistor featuring a new gate stack structure using a Hf-based high-k dielectric (*1) and a metal gate electrode (*2), ...

* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...

Multilevel nonvolatile transistor memories were fabricated using star-shaped poly((4-diphenylamino)benzyl methacrylate) (star-PTPMA) electret dielectric for charge storage and ...

An ultra-scaled memory device, called `Dynamic Flash Memory (DFM)’. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F 2 cell can be achieved. “This paper proposes an ultra-scaled ...

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...