“Worldwide adoption of fourth-generation wireless (4G) long-term evolution (LTE) smartphones and the actual transition to fifth-generation wireless (5G) is the main driving engine for semiconductor ...
While broadband silicon tuner products have been on the market for several years, until recently none have integrated the active tuner and amplifier components in the RF front end receive chain, ...
Editor's note: We're pleased to present, in serial form, Chapter 9 of RF Front-End: World Class Designs, edited by Janine Sullivan Love. This nearly 500-page book will be of interest to almost any ...
BEAVERTON, Ore.--(BUSINESS WIRE)--The Open RF Association (OpenRF™), an open industry consortium dedicated to creating a 5G ecosystem of functionally interoperable hardware and software across RF ...
Indian fabless semiconductor startup Silizium Circuits has completed the end-to-end design of a GaAs-based 5G low-noise amplifier (LNA), or front-end module (FEM), marking a step forward in the ...
DUBLIN--(BUSINESS WIRE)--The "Broadcom AFEM-8072 - Mid and High Band LTE RF Front-End Module (FEM) Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. This report ...
Front-end limiter circuits using Schottky and PIN diodes can provide needed protection in communications and other RF systems. However, designers still must deal with the upper-frequency limit problem ...
Chipmaker Broadcom Inc. today debuted four RF front-end modules for powering routers that use Wi-Fi 7, a new wireless networking standard. The company says its modules can also be used to build Wi-Fi ...
Simplified continuous tuning of filters, impedance matching networks, and antennas has become a crucial design element in modern mobile devices. Wireless 3G/4G technologies, Wi-Fi, Bluetooth, GPS, and ...
For 5G smartphones and other millimeter wave (mmWave) applications, antenna integration off the board and into the package, simplifies the design challenges endemic to high-frequency devices. These ...
Tokyo, Japan, Feb 4, 2008 - (JCN Newswire) - Fujitsu Laboratories, Ltd. today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology.
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