EDN

Toshiba Unveils New SOI Process Optimized for RF Switch Applications

Products utilizing the new TaRF8 SOI-CMOS [6] TarfSOI front-end process achieve the lowest-class insertion loss in the industry, 0.32dB at 2.7GHz. Compared with products using Toshiba's current TaRF6 ...
Semiconductor Engineering

RF SOI Market Heats Up

GlobalFoundries has entered the radio-frequency silicon-on-insulator (RF SOI) foundry business as part of an alliance with Peregrine Semiconductor. As part of the move, Peregrine is entering the RF ...
Business Wire

Toshiba Unveils SOI Process Achieving the Lowest-class Insertion Loss in the Industry for RF Switches in Smartphones | Business Wire

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the development of “TaRF8”, a next generation TarfSOI™ (Toshiba advanced RF SOI) ...
Design-Reuse

Cadence and Tower release RF SOI process

The reference design flow provides a faster path to design closure for advanced 5G wireless, wireline infrastructure, and automotive IC product development. Tower's RF and high-performance analog ...
Design-Reuse

Peregrine Semiconductor Introduces First RF SOI 300 mm Technology Platform

SAN DIEGO – July 6, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 11 platform, the industry’s first RF ...