The CTLM1034-M832D discrete module is composed of a 40-V, 1-A VCE(sat) npn transistor, and a 40-V, 1-A low VF Schottky rectifier. The complementary CTLM1074-M832D is made of a 40-V, 1-A low VCE(sat) ...
And here it is, modelled using LTSpice. It is the same circuit as the classic simple precision rectifier (set to pass the negative half-sine), but with the non-inverting input of the op-amp connected ...
The need to improve electronic circuits’ efficiency, to follow the ongoing trend to lower supply voltages and higher operating currents and to deal with multiple supply voltages has lead to certain ...
For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...
Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...
Signal and power isolation using a DC-DC converter implementation. The importance of isolation in medical equipment. A self-driven synchronous-rectifier circuit to isolate high voltage. One of the ...
The four-layer diode was the key to William Shockley's plan to revolutionize AT&T's phone system. It was a great device in theory, but not in practice -- at least not at the time when Shockley wanted ...
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