Business Wire

Research and Markets: Static Random Access Memory (SRAM) Market to 2020 - High Performance Networking Applications Will Bring New Opportunities

DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/2113be/static_random_acce) has announced the addition of the "Static Random ...

Digital Storage And Memory Projections For 2026, Part 2

AI is driving demand and higher prices for DRAM and NAND into 2026.  Products using non-volatile memories to replace NOR and ...
Nanowerk

Random-Access Memory (RAM): High-Speed Data Storage and Retrieval

RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...
Semiconductor Engineering

Overcoming Challenges In Next-Generation SRAM Cell Architectures

Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each ...
EDN

Integrated Silicon Solution : Asynchronous SRAM has access times as fast as 8 ns

The IS61WV51232 is the third in a broad range of 16Mb SRAMs that ISSI is developing including a variety of organizations, voltage and temperature ranges. It is targeted for networking, telecom, ...
EDN

8-Mbit asynchronous SRAM boasts access time of 8-ns

San Jose, Calif.—Integrated Silicon Solution Inc. has introduced a high speed, low power 256Kx32, 8-Mbit, asynchronous SRAM, the IS61WV25632, with access times of 8nS. The IS61WV25632 gives the ...
Semiconductor Engineering

How Memory Design Optimizes System Performance

Exponential increases in data and demand for improved performance to process that data has spawned a variety of new approaches to processor design and packaging, but it also is driving big changes on ...