RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...

Magneto-resistive random access memory (MRAM) is a non-volatile memory technology that relies on the (relative) magnetization state of two ferromagnetic layers to store binary information. Throughout ...

A new technical paper titled “Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing” was published by researchers at Politecnico di Milano, IUNET and ...

In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...