EDN

1200 V Ultra Fast Switching SiC Schottky Diodes

IXYS has introduced the availability of the DCG85X1200NA and DCG100X1200NA SiC Schottky diodes for higher power applications. These diodes offer ultra fast switching with zero reverse recovery and are ...
EDN

Ultra-Fast Switching with 1200V SiC Schottky Diode

IXYS announces the availability of the DCG45X1200NA and the DCG130X1200NA, both dual 1200V rated SiC Schottky diodes in MiniBLOC TM (SOT-227) package, which are fully isolated. The IXYS SiC schottky ...
Electronic Design

Ultra-Fast 1200 V IGBTs Reduce Switching and Conduction Losses

A new family of 1200V IGBTs has been optimized for lowest switching losses and smoothest turn-off in higher frequency and motor control applications. This paper will explain new approaches such as the ...
Business Wire

Automotive-Qualified Qspeed Silicon Diodes Feature Lowest Qrr for Efficient, High-Switching-Speed Designs

SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...
Electronic Design

Ultra-fast 600 V IGBTs

International Rectifier, IR announced expansion of its portfolio of rugged, reliable ultra-fast 600 V Trench Insulated Gate Bipolar Transistors (IGBTs) with the introduction of the IRGP4067DPbF and ...