Kioxia Corp. announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of high-density, low-power 3D DRAM. This technology was ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

A stunning new imaging breakthrough lets scientists see — and fix — the atomic flaws hiding inside tomorrow’s computer chips.

Researchers at Cornell University have developed a powerful imaging technique that reveals atomic scale defects inside computer chips for the first time. Using an advanced electron microscopy method, ...

The structure it has invented is called Tri-Gate and will be first used in chips manufactured using the 22-nanometre process, nicknamed Ivy Bridge. Continuing along the path of Moore's Law would have ...

The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...

Recent advances in semiconductor technology have pushed the concept of transistors with switching speeds greater than one terahertz, or one trillion cycles per second, closer to reality. Transistors ...

A new type of transistor is being developed by scientists at the NASA Ames Research Center that meshes together the best aspect of semiconductors and traditional vacuum-tube technology. This ...

For nearly two decades, two‑dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising ...